Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure

A device, comprising:

• a doped region formed in a semiconductor substrate, wherein said doped region is comprised of one of N-type dopants or P-type dopants;
• an anode that is conductively coupled to said doped region, said anode being comprised of a first metal silicide region positioned on said doped region and a first conductive metal-containing contact that is positioned above and conductively coupled to said first metal silicide region;
• and
• a cathode that is conductively coupled to said doped region and spaced apart from said anode, said cathode being comprised of a second metal silicide region positioned on said doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to said second metal silicide region, wherein said first and second metal silicide regions are made of the same metal silicide and wherein said first and second conductive structures are made of the same metal-containing material.

A method, comprising:

• forming a doped region in a semiconductor substrate for an e-fuse device;
• forming a transistor structure in and above said substrate, said transistor comprising a doped source/drain region;
• and
• performing at least one first common process operation to form a first conductive structure that is positioned on said doped region of said e-fuse device and a second conductive structure that is positioned on said source/drain region of said transistor.

A method, comprising:

• forming a doped region in a semiconductor substrate for an e-fuse device;
• forming a transistor structure in and above said substrate, said transistor comprising a doped source/drain region;
• performing at least one first common process operation to form a first metal silicide region that is positioned on said doped region of said e-fuse device and a second metal silicide region that is positioned on said source/drain region of said transistor, wherein said first and second metal silicide regions are comprised of the same metal silicide;
• and
• performing at least one second common process operation to form a first conductive contact that is positioned above and conductively coupled to said first metal silicide region and a second conductive contact that is positioned above and conductively coupled to said second metal silicide region, wherein said first and second conductive contacts are comprised of the same metal-containing material.