High-voltage trench junction barrier schottky diode

A Schottky diode, comprising:

• an n+ substrate;
• an n-epitaxial layer having a thickness D_epi;
• at least two trenches introduced into the n-epitaxial layer, each trench having a width Wt and a depth Dt;
• mesa regions each having a width Wm, wherein each mesa region is provided between two adjacent trenches;
• a metal layer functioning as a cathode electrode on the rear side of the n+ substrate of the Schottky diode;
• and
• a metal layer functioning as an anode electrode on the front side of the Schottky diode, the metal layer forming an ohmic contact with the trenches and a Schottky contact with the n-epitaxial layer;
• wherein:
• the following equation holds for the depth Dt of the trenches and the thickness D_epi of the n-epitaxial layer:
• K·Dt<D_epi, where K>4;
• the following equation holds for the ratio of the depth Dt of the trenches to the width Wm of the mesa regions:
• Dt/Wm≧2;
• and
• the following relationship holds:
• NA·Wt>>ND·Wm, where NA is the doping concentration of the trenches, Wt is the width of each of the trenches, ND is the doping concentration of the n-epitaxial layer, and Wm is the width of the mesa region between two trenches.