Magnetoresistive device and method of forming the same

Abstract

According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a magnetization orientation that is variable, and a spin orbit coupling structure including a tunnel barrier including a metal oxide, and a metal layer, wherein the tunnel barrier and the metal layer are arranged one over the other, wherein the spin orbit coupling structure is adapted to generate, in response to an applied current, a field to interact with the free magnetic layer structure for switching the magnetization orientation of the free magnetic layer structure. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.

Dependencies are inferred from the claim text.