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AssigneeInfineon Technologies AG
InventorsAndreas Meiser, Markus Zundel, Till Schloesser
Estimating the term…
An integrated circuit is formed in a semiconductor substrate. The integrated circuit includes a trench formed in a first main surface of the semiconductor substrate. The trench includes a first trench portion and a second trench portion. The first trench portion is connected with the second trench portion. Openings of the first and second trench portions are adjacent to the first main surface. The integrated circuit further includes a trench transistor structure including a gate electrode disposed in the first trench portion, and a trench capacitor structure including a capacitor dielectric and a first capacitor electrode. The capacitor dielectric and the first capacitor electrode are disposed in the second trench portion. The first capacitor electrode includes a layer conformal with a sidewall of the second trench portion.
An integrated circuit in a semiconductor substrate, the integrated circuit comprising:
A method of manufacturing an integrated circuit in a semiconductor substrate, the method comprising:
A method of manufacturing an integrated circuit in a semiconductor substrate, the method comprising:
Dependencies are inferred from the claim text.