Solid-state imaging device and method of manufacturing the same

A solid-state imaging device comprising:

• a semiconductor layer on which a plurality of photoelectric conversion elements are arranged in a two-dimensional array;
• a reflector that covers a surface of the semiconductor layer on a side opposite to a surface of a semiconductor layer on which light is incident, and that reflects the light incident thereon;
• and
• a plurality of element separating regions formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements, each element separating region extending from the surface of the semiconductor layer on which light is incident to the reflector and having a reflection surface for reflecting light,
• wherein the reflector and the element separating regions are biased with a potential that reduces dark current in the photoelectric conversion elements.

A method of manufacturing a solid-state imaging device comprising:

• forming a semiconductor layer having a plurality of photoelectric conversion elements arranged in a two-dimensional array;
• forming a reflector that covers a surface of the semiconductor layer on a side opposite to a surface of a semiconductor layer on which light is incident and reflects light incident thereon;
• and
• forming a plurality of element separating regions in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements, each element separating region extending from the surface of the semiconductor layer on which light is incident to the reflector and having a reflection surface for reflecting light,