Semiconductor Switching Device Separated by Device Isolation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Szu-Ying Chen, Wei-Cheng Hsu, Hsiao-Hui Tseng
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Abstract
A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.
Claims20
A device comprising:
- a gate structure formed over a semiconductor substrate, the gate structure having extensions;
- a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure;
- and
- source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.
A method for forming a transistor device to be used in association with a photo-sensitive device, the method comprising:
- forming device isolation structures into a semiconductor substrate;
- forming photo-sensitive devices into the device isolation structures;
- forming a gate structure over the device isolation material, the gate structure having extensions over a portion of the device isolation structure;
- and
- forming source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.
A transistor device within an array of photo-sensitive devices, the device comprising:
- a device isolation structure formed into a semiconductor substrate;
- photo-sensitive devices being isolated by the device isolation structure;
- a gate structure formed over the semiconductor substrate, the gate structure having extensions over a portion of the device isolation structure;
- a sidewall spacer formed on the sides of the gate structure;
- and
- source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.
Dependencies are inferred from the claim text.