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US 2015/0028399 A1Published application
Semiconductor Devices and Methods of Manufacturing the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsJunjie Xiong, Dongho Cha, Myung Jin Kang, Kihoon Do
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Abstract
Provided are semiconductor devices and methods of manufacturing the same. The methods include providing a substrate including a first region and a second region, forming first mask patterns in the first region, and forming second mask patterns having an etch selectivity with respect to the first mask patterns in the second region. The first mask patterns and the second mask patterns are formed at the same time.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate including a first region and a second region that is different from the first region;
- forming first mask patterns in the first region;
- and
- forming, in the second region, second mask patterns having an etch selectivity with respect to the first mask patterns, while forming the first mask patterns.
1 more element
A semiconductor device comprising:
- a substrate including a first region and a second region;
- first source/drain regions in the first region;
- second source/drain regions in the second region;
- first contact plugs that are electrically connected to the first source/drain regions;
- second contact plugs electrically connected to the second source/drain regions;
- a first pattern between ones of the first source/drain regions and ones of the first contact plugs, the first pattern configured to provide ohmic contact between ones of the first source/drain regions and respective ones of the first contact plugs;
- and
- a second pattern between ones of the second source/drain regions and ones of the second contact plugs, the second pattern configured to provide for ohmic contact between ones of the second source/drain regions and respective ones of the second contact plugs,
- wherein the first pattern and the second pattern include elemental semiconductors that are different from each other.
6 more elements
A method comprising:
- forming first mask patterns having a first etch selectivity in a first region of a substrate;
- and
- while forming the first mask patterns, forming second mask patterns having a second etch selectivity that is different from the first etch selectivity in a second region of the substrate that is different from the first region of the substrate.
Dependencies are inferred from the claim text.