pH SENSOR WITH BONDING AGENT DISPOSED IN A PATTERN
AssigneeHoneywell International Inc.
InventorsDonald Horkheimer, Paul S. Fechner, David S. Willits
Life of this patent
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Abstract
Embodiments described herein provide for a pH sensor that comprises a substrate and an ion sensitive field effect transistor (ISFET) die. The ISFET die includes an ion sensing part that is configured to be exposed to a medium such that it outputs a signal related to the pH level of the medium. The ISFET die is bonded to the substrate with at least one composition of bonding agent material disposed between the ISFET die and the substrate. One or more strips of the at least one composition of bonding agent material is disposed between the substrate and the ISFET die in a first pattern.
Claims20
A pH sensor comprising:
- a substrate;
- an ion sensitive field effect transistor (ISFET) die including an ion sensing part that responds to pH, wherein the ISFET die is bonded to the substrate;
- wherein the ion sensing part of the ISFET die is configured to be exposed to a medium, and wherein the ion sensing part outputs a signal related to a pH level of the medium;
- and
- one or more strips of at least one composition of a bonding agent material disposed in a first pattern between the substrate and the ISFET die.
A method of manufacturing a pH sensor, the method comprising:
- forming one or more strips of a first bonding agent material on a substrate;
- forming a layer of second material on the substrate in a second pattern;
- placing the ISFET die on the substrate such that one or more strips of the first pattern and the layer of second material are disposed between the substrate and the ISFET die;
- and
- bonding the substrate to the ISFET die by heating the first bonding agent.
A pH sensor comprising:
- a substrate;
- an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is bonded to the substrate;
- and
- one or more linear strips of a first frit material disposed between the ISFET die and the substrate, wherein the one or more linear stripes are all disposed in the same direction.
Dependencies are inferred from the claim text.