Solid-state imaging device and line sensor

A solid-state imaging device comprising:

• a pixel portion including a light sensing layer provided on a surface of a semiconductor substrate to generate charge depending upon a light sensing amount of incident light and a shield layer for light sensing layer provided so as to shield the light sensing layer;
• a charge detection portion to which the charge stored in the pixel portion is transferred and which generates a voltage drop depending upon a charge amount of the transferred charge;
• and
• a transfer gate portion reading out the charge stored in the pixel portion and transferring the charge to the charge detection portion,
• wherein the shield layer for light sensing layer has a concave part to expose a part of the light sensing layer adjacent to the transfer gate portion.

A line sensor comprising:

• a circuit substrate;
• a plurality of solid-state imaging devices arranged in a straight line form on a surface of the circuit substrate;
• a light guide plate disposed above the surface of the circuit substrate to emit light toward a subject;
• and
• a lens array disposed above the surface of the circuit substrate to converge the light reflected from the subject to the plurality of solid-state imaging devices,
• wherein each of the plurality of solid-state imaging devices comprises
• a pixel portion including a light sensing layer provided on a surface of a semiconductor substrate to generate charge depending upon a light sensing amount of incident light, and a shield layer for light sensing layer provided so as to shield the light sensing layer;
• a charge storage portion including a charge storage layer provided on the surface of the semiconductor substrate to store the charge generated in the pixel portion and a shield layer for charge storage layer provided so as to shield the charge storage layer;
• a first transfer gate portion reading out the charge from the pixel portion and transferring the charge to the charge storage portion;
• a charge detection portion to which the charge stored in the charge storage portion is transferred and which generates a voltage drop depending upon a charge amount of the transferred charge;
• and
• a second transfer gate portion reading out the charge stored in the charge storage portion and transferring the charge to the charge detection portion, and
• at least one of the shield layer for light sensing layer and the shield layer for charge storage layer has a concave part to expose a part of the light sensing layer adjacent to the first transfer gate portion, or a part of the charge storage layer adjacent to the second transfer gate portion.