Semiconductor devices comprising a fin

A semiconductor device comprising a fin, the fin comprising:

• a first semiconductive material disposed over a workpiece;
• an oxide of the first semiconductive material disposed over the first semiconductive material;
• a source region disposed over a first end of the oxide of the first semiconductive material;
• a drain region disposed over a second end of the oxide of the first semiconductive material, the second end being opposite the first end;
• a second semiconductive material disposed over the oxide of the first semiconductive material and between the source region and the drain region, the second semiconductive material having a first surface facing away from the workpiece and a second surface facing the workpiece;
• a first insulating material disposed around the second semiconductive material, the first insulating material having a first portion disposed over the first surface of the second semiconductive material and a second portion disposed between the second surface of the second semiconductive material and a surface of the oxide of the first semiconductive material facing the second semiconductive material;
• a conductive material disposed around the second semiconductive material, the conductive material having a first portion disposed over the first portion of the first insulating material, the conductive material having a second portion disposed between the second portion of the first insulating material and the surface of the oxide of the first semiconductive material facing the second semiconductive material;
• and
• a second insulating material lining the conductive material, the second insulating material having a first portion disposed between the first portion of the conductive material and the first portion of the first insulating material, the second insulating material having a second portion disposed between the second portion of the conductive material and the surface of the oxide of the first semiconductive material facing the second semiconductive material.

A semiconductor device comprising:

• a fin disposed over a workpiece, the fin comprising:
• a first semiconductive material disposed over the workpiece;
• an oxide of the first semiconductive material disposed over the first semiconductive material;
• a second conductive material disposed over and spaced apart from the oxide of the first semiconductive material;
• a first insulating material disposed around and lining the second semiconductive material;
• a conductive material disposed around the first insulating material;
• and
• a second insulating material disposed between the oxide of the first semiconductive material and a portion of the conductive material facing the workpiece, the second insulating material further lining sidewalls of the conductive material.