Lateral bipolar transistor and its manufacturing method
AssigneeHitachi, Ltd.
InventorsTomoyuki Miyoshi, Takayuki Ooshima, Youhei Yanagida
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Abstract
The disclosed lateral bipolar transistor is manufactured by a manufacturing process of self-alignedly implanting an impurity to a gate electrode and thermally diffusing the impurity to form a base layer and an emitter layer. The gate electrode is utilized as an independent fourth terminal in addition to base, emitter, and collector terminals, whereby hfe can be controlled and enhanced by a gate potential. Accordingly, the present invention can provide a bipolar transistor that is hardly affected by a manufacturing variation, or that can be corrected by the gate terminal, and that has a high gain.
Claims12
A lateral bipolar transistor comprising:
- a semiconductor substrate;
- a gate oxide film and a gate electrode, which are formed on a surface of the semiconductor substrate;
- a collector region formed apart from the gate electrode with a distance, and having a feed region of a first conductive type;
- an emitter region formed in the vicinity of the gate oxide film in a horizontal direction at a side opposite to the collector region across the gate electrode, and having a feed region of a first conductive type;
- and
- a base region of a second conductive type formed below the gate oxide film and having a feed region that is located close to the emitter feed region, wherein
- the emitter region, the base region, and the collector region are formed in the horizontal direction.
A method of manufacturing a lateral bipolar transistor comprising:
- selectively forming a gate oxide film and a gate electrode on a surface of a semiconductor region present on a semiconductor substrate;
- forming a collector region, having a feed region of a first conductive type, apart from the gate electrode with a predetermined distance;
- and
- self-alignedly forming a base region via the gate electrode, and self-alignedly forming an emitter region, having a feed region of a first conductive type, to the gate electrode in the vicinity of the gate oxide film, in a region horizontal to the collector region across the gate electrode.
Dependencies are inferred from the claim text.