Pixel structure, display panel and fabrication method thereof

A display panel, comprising:

• a first substrate;
• an active switching device, disposed on the first substrate;
• a patterned common electrode layer, disposed on the first substrate;
• an insulation layer, disposed on the first substrate and covering the patterned common electrode layer;
• a patterned oxide electrode layer, disposed on the insulation layer and electrically connected to the active switching device, the patterned oxide electrode layer comprising:
• a semiconductor part, substantially overlapping the patterned common electrode layer in a vertical projection direction;
• and
• a conductive part, connected to the semiconductor part and substantially not overlapping the patterned common electrode layer in the vertical projection direction, and the conductive part being a pixel electrode;
• a patterned passivation layer, disposed on the patterned oxide electrode layer and covering the semiconductor part of the patterned oxide electrode layer, wherein the patterned passivation layer has an opening exposing the conductive part of the patterned oxide electrode layer;
• a second substrate, facing the first substrate;
• and
• a display medium, interposed between the first substrate and the second substrate.

A method of fabricating pixel structure, comprising:

• providing a first substrate;
• forming a patterned common electrode layer on the first substrate;
• forming an insulation layer on the first substrate, wherein the insulation layer covers the patterned common electrode layer;
• forming a patterned oxide electrode layer and a patterned passivation layer on the insulation layer, wherein the patterned oxide electrode layer comprises a semiconductor part substantially overlapping the patterned common electrode layer in a vertical projection direction and a conductive part connected to the semiconductor part and substantially not overlapping the patterned common electrode layer in the vertical projection direction, the conductive part is a pixel electrode, the patterned passivation layer covers the semiconductor part of the patterned oxide electrode layer and the patterned passivation layer has an opening exposing the conductive part of the patterned oxide electrode layer;
• and
• forming an active switching device on the first substrate, wherein the patterned oxide electrode layer is electrically connected to the active switching device.