Light emitting diode having multi-junction structure and method of fabricating the same
AssigneeGwangju Institute of Science and Technology
InventorsDong-Seon LEE, Dukjo KONG, Chang Mo KANG
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Abstract
Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.
Claims14
A light emitting diode comprising:
- a light emitting structure formed on a substrate, and comprising a first n-type semiconductor layer, a first light emitting layer, a p-type semiconductor layer, a second light emitting layer and a second n-type semiconductor layer;
- a first n-type electrode adjoining the first n-type semiconductor layer at a lower portion of the light emitting structure;
- a second n-type electrode adjoining the second n-type semiconductor layer at an upper portion of the light emitting structure;
- and
- a p-type electrode adjoining a side surface of the p-type semiconductor layer of the light emitting structure.
A method of fabricating a light emitting diode, comprising:
- sequentially forming a first n-type semiconductor layer, a first light emitting layer, a p-type semiconductor layer, a second light emitting layer and an second n-type semiconductor layer on a substrate;
- forming light emitting structures by etching the second n-type semiconductor layer, the second light emitting layer, the p-type semiconductor layer, the first light emitting layer and the first n-type semiconductor layer;
- forming a first passivation layer such that a space between the light emitting structures is filled with the first passivation layer, followed by forming a p-type electrode adjoining a side surface of the p-type semiconductor layer;
- and
- forming a second passivation layer on the p-type electrode and forming a second n-type electrode electrically connected to the second n-type semiconductor layer on the second passivation layer.
Dependencies are inferred from the claim text.