Method of Forming A Semiconductor Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZiwei Fang, Tsan-Chun Wang, De-Wei Yu
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Abstract
A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.
Claims20
A device comprising:
- a substrate having a first strain;
- a gate stack disposed over the substrate;
- source/drain (S/D) features in the substrate, wherein the S/D features have a second strain different than the first strain;
- and
- dislocations disposed substantially along lines extending from within the S/D features into the substrate to respective pinchoff points outside of the S/D features.
A device comprising:
- a substrate with an isolation feature therein;
- a gate stack laterally spaced apart from the isolation feature;
- and
- a source and a drain disposed in the substrate, wherein the source and drain each have a different strain than a strain of the substrate, and wherein the gate stack is disposed between the source and the drain;
- wherein the substrate comprises first dislocations disposed outside the source and drain and substantially along lines in the substrate that extend to respective pinchoff points.
A device comprising:
- a substrate with an isolation feature therein and a first substrate region having a first strain;
- a first gate stack and a second gate stack over the substrate, wherein the first gate stack is disposed over the first substrate region and wherein the second gate stack is disposed over the isolation feature;
- spacers adjoining sidewalls of the first and second gate stacks;
- recesses adjacent to edges of the first gate stack in the substrate;
- and
- source/drain (S/D) features in the recesses, wherein the S/D features have a second strain different than the first strain;
- and
- dislocations disposed substantially along lines extending from within the S/D features into the first substrate region to respective pinchoff points disposed under the first gate stack.
Dependencies are inferred from the claim text.