Semiconductor device

A semiconductor device comprising:

• a substrate made of a first conductivity type SiC and having a predetermined off-angle;
• an epitaxial layer made of a first conductivity type SiC and formed on a major surface of the substrate;
• a plurality of unit cells demarcated in the epitaxial layer by first conductivity type epitaxial lines including a first line and a second line respectively intersecting the off-direction of the substrate and intersecting each other, and each line having a first conductivity type source region forming a portion of a front surface of the epitaxial layer, and a second conductivity type channel region formed on a rear surface side of the epitaxial layer with respect to the source region so as to contact the source region and forming a portion of the front surface of the epitaxial layer;
• a gate insulating film formed on the front surface of the epitaxial layer;
• and
• a gate electrode formed on the gate insulating film and facing the channel region across the gate insulating film.

A semiconductor device comprising:

• a substrate made of a first conductivity type SiC and having a predetermined off-angle;
• an epitaxial layer made of a first conductivity type SiC and formed on a front surface of the substrate;
• a plurality of unit cells demarcated in the epitaxial layer by first conductivity type epitaxial lines including a first line parallel to an off-direction of the substrate and a second line intersecting the first line, and each line having a first conductivity type source region forming a portion of a front surface of the epitaxial layer, and a second conductivity type channel region formed on a rear surface side of the epitaxial layer with respect to the source region so as to contact the source region and forming a portion of the front surface of the epitaxial layer;
• a gate insulating film formed on the front surface of the epitaxial layer;
• a gate electrode formed on the gate insulating film and facing the channel region across the gate insulating film;
• and a damage layer formed on the first line in the epitaxial layer having properties different from those of other portions of the epitaxial layer.