Methods of Forming Buried Junction Devices in Silicon Carbide Using Ion Implant Channeling and Silicon Carbide Devices Including Buried Junctions
AssigneeCree, Inc.
InventorsEdward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Lin Cheng
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Abstract
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
Claims20
A semiconductor device, comprising:
- a silicon carbide substrate having a first conductivity type;
- a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate;
- and
- a buried junction structure in the silicon carbide drift layer, wherein the buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
A method of forming an electronic device, comprising:
- providing a silicon carbide drift layer having a first conductivity type and a first doping concentration and having a crystallographic axis;
- and
- implanting dopant ions to form a buried junction structure in the silicon carbide drift region, wherein the buried junction structure has a second conductivity type that is opposite the first conductivity type and has a second doping concentration that is greater than the first doping concentration, wherein implanting the dopant ions comprises implanting the dopant ions at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°.
Dependencies are inferred from the claim text.