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US 2015/0028349 A1Published application
Method to induce strain in 3-d microfabricated structures
AssigneeSTMicroelectronics S.r.l.
InventorsNicolas Loubet, Pierre Morin
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Abstract
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
Claims29
A method for making a strained three-dimensional feature patterned on a substrate, the method comprising:
- forming a first semiconductor layer in a strained state at a surface of a substrate;
- forming a second semiconductor layer adjacent the first semiconductor layer;
- patterning the three-dimensional feature in at least the second semiconductor layer;
- and
- cutting the first semiconductor layer in the vicinity of the patterned three-dimensional feature to relieve strain in the first semiconductor layer and induce strain in the patterned three-dimensional feature.
2 more elements
A strained-channel finFET structure formed on a substrate comprising:
- a strain-inducing feature adjacent to a fin of the finFET structure, wherein the strain-inducing feature is formed from a first semiconductor material having a first strain;
- and
- the fin formed from a second semiconductor material that is strained by the strain-inducing feature.
Dependencies are inferred from the claim text.