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US 2015/0028346 A1Published application
Aluminum nitride based semiconductor devices
AssigneeMassachusetts Institute of Technology
InventorsTomas Apostol Palacios, Tatsuya Fujishima
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Abstract
Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by exploiting the polar nature of AIN materials. Embodiments of AIN transistors utilizing polarization-based carrier confinement are described.
Claims42
An electronic semiconductor device comprising:
- a first semiconductor region comprising a III-N semiconductor material including aluminum and nitrogen, wherein the proportion of aluminum as a group III element of the III-N semiconductor material is greater than or equal to 50%;
- a second semiconductor region comprising a III-N semiconductor material including aluminum and nitrogen, wherein the proportion of aluminum as a group III element of the III-N semiconductor material is greater than or equal to 50%;
- and
- a third semiconductor region having a bandgap lower than that of the first semiconductor region, the third semiconductor region being formed between the first semiconductor region and the second semiconductor region,
- wherein charge carriers are confined in the first semiconductor region or the second semiconductor region.
2 more elements
An electronic semiconductor device, comprising:
- a first semiconductor region comprising AlN;
- and
- a second semiconductor region having a graded composition, the graded composition being graded from AlN to a III-N semiconductor material comprising a first group III element and at least one second group III element, wherein the first group III element is aluminum.
An electronic semiconductor device, comprising:
- a semiconductor region having a graded composition, the graded composition being graded from a first composition of Bw1Alx1Iny1Gaz1N, wherein w1+x1+y1+z1=1, to a second composition of Bw2Alx2Iny2Gaz2N, wherein w2+x2+y2+z2=1, wherein w1≧0, w2≧0, x1≧0, x2≧0, y1≧0, y2≧0, z1≧0, z2≧0, and wherein x2 is greater than 0.3.
A semiconductor electronic device, comprising:
- a semiconductor region comprising a group III-N semiconductor material in which charge carriers are confined, wherein the charge carriers are confined in a confinement region, and wherein, in the confinement region, the group III-N semiconductor material of the semiconductor region is formed of BwAlxInyGazN in which x is no less than 0.5.
Dependencies are inferred from the claim text.