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US 2015/0028345 A1Published application
Transistor having metal diffusion barrier and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKing-Yuen WONG, Po-Chih CHEN, Chen-Ju YU, Fu-Chih YANG, Jiun-Lei Jerry YU, Fu-Wei YAO, Ru-Yi SU, Yu-Syuan LIN
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Abstract
A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer.
Claims20
A transistor comprising:
- a substrate;
- a channel layer over the substrate;
- an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer;
- a metal diffusion barrier over the active layer;
- and
- a gate over the metal diffusion barrier.
3 more elements
A transistor comprising:
- a substrate;
- a nucleation layer over the substrate;
- a graded layer over the nucleation layer;
- a channel layer over the graded layer;
- an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer that causes a 2-DEG to form;
- source and drain electrodes over the active layer;
- a dielectric layer over the source and drain electrodes and over a portion of the active layer, the dielectric layer having a gap over the dielectric layer;
- a p-GaN layer over the active layer and in the gap;
- an n-GaN layer over the p-GaN layer;
- a barrier layer over the n-GaN layer;
- and
- a gate over the barrier layer.
9 more elements
A method of making a transistor, the method comprising:
- forming a channel layer over a substrate;
- forming an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer;
- forming a metal diffusion barrier over the active layer;
- and
- forming a gate over the metal diffusion barrier.
2 more elements
Dependencies are inferred from the claim text.