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US 2015/0028335 A1Published application
Imaging device and method for driving the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiyuki KUROKAWA, Takayuki IKEDA
Life of this patent
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Abstract
An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced.
Claims17
(canceled)
An imaging device comprising:
- a first transistor, a second transistor, a third transistor, each comprising:
- a gate electrode over an insulting surface;
- an gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- and
- a first electrode and a second electrode over the oxide semiconductor layer,
- a capacitor;
- a first insulating film over at least the first transistor, the second transistor, the third transistor;
- an optical sensor element;
- a second insulating film over the first insulating film and the optical sensor element;
- and
- a scintillator over the second insulating film,
- wherein the first electrode of the first transistor is electrically connected to a first portion of the optical sensor element with a first wiring through an opening of the first insulating film and an opening of the second insulating film,
- wherein the second electrode of the first transistor is electrically connected to a gate of the second transistor and the capacitor, and
- wherein the first electrode of the second transistor is electrically connected to the first electrode of the third transistor.
12 more elements
An imaging device comprising:
- a first transistor, a second transistor, a third transistor, each comprising:
- a gate electrode over an insulting surface;
- an gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- and
- a first electrode and a second electrode over the oxide semiconductor layer,
- a capacitor;
- a first insulating film over at least the first transistor, the second transistor, the third transistor;
- a photodiode;
- a second insulating film over the first insulating film and the photodiode;
- and
- a scintillator over the second insulating film,
- wherein the first electrode of the first transistor is electrically connected to an anode of the photodiode with a first wiring through an opening of the first insulating film and an opening of the second insulating film,
- wherein the second electrode of the first transistor is electrically connected to a gate of the second transistor and the capacitor, and
- wherein the first electrode of the second transistor is electrically connected to the first electrode of the third transistor.
12 more elements
An imaging device comprising:
- a first transistor, a second transistor, a third transistor, each comprising:
- a gate electrode over an insulting surface;
- an gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- and
- a first electrode and a second electrode over the oxide semiconductor layer,
- a first insulating film over at least the first transistor, the second transistor, the third transistor;
- an optical sensor element;
- a second insulating film over the first insulating film and the optical sensor element;
- and
- a scintillator over the second insulating film,
- wherein the first electrode of the first transistor is electrically connected to a first portion of the optical sensor element with a first wiring through an opening of the first insulating film and an opening of the second insulating film,
- wherein the second electrode of the first transistor is electrically connected to the gate electrode of the second transistor, and
- wherein the first electrode of the second transistor is electrically connected to the first electrode of the third transistor.
11 more elements
An imaging device comprising:
- a first transistor, a second transistor, a third transistor, each comprising:
- a gate electrode over an insulting surface;
- an gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- and
- a first electrode and a second electrode over the oxide semiconductor layer,
- a first insulating film over at least the first transistor, the second transistor, the third transistor;
- a photodiode;
- a second insulating film over the first insulating film and the photodiode;
- and
- a scintillator over the second insulating film,
- wherein the first electrode of the first transistor is electrically connected to an anode of the photodiode with a first wiring through an opening of the first insulating film and an opening of the second insulating film,
- wherein the second electrode of the first transistor is electrically connected to a gate of the second transistor, and
- wherein the first electrode of the second transistor is electrically connected to the first electrode of the third transistor.
11 more elements
Dependencies are inferred from the claim text.