Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideki MATSUKURA
Life of this patent
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Abstract
The number of oxide semiconductor layers is increased with the parallel connection of a first transistor and a second transistor. The parasitic capacitance effects on the driving of the transistor. An oxide semiconductor layer has a first channel formation region and a second channel formation region. Over the oxide semiconductor layer, a source electrode and a drain electrode are placed. An insulating layer is placed over the source electrode and the drain electrode. A gate electrode is placed over the insulating layer. The gate electrode has an opening. The opening overlaps with the source electrode or the drain electrode.
Claims12
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer over the first insulating layer;
- a second conductive layer over the oxide semiconductor layer;
- a third conductive layer over the oxide semiconductor layer;
- a second insulating layer over the second conductive layer and the third conductive layer;
- a fourth conductive layer over the second insulating layer;
- a fifth conductive layer over the second insulating layer;
- a third insulating layer over the fourth conductive layer and the fifth conductive layer;
- and
- a sixth conductive layer over the third insulating layer.
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer over the first insulating layer;
- a second conductive layer over the oxide semiconductor layer;
- a third conductive layer over the oxide semiconductor layer;
- a second insulating layer over the second conductive layer and the third conductive layer;
- a fourth conductive layer over the second insulating layer;
- a fifth conductive layer over the second insulating layer;
- a third insulating layer over the fourth conductive layer and the fifth conductive layer;
- and
- a sixth conductive layer over the third insulating layer,
- wherein the oxide semiconductor layer includes a first channel formation region of a first transistor,
- wherein the oxide semiconductor layer includes a second channel formation region of a second transistor,
- wherein the first conductive layer has a function of a first gate electrode of the first transistor,
- wherein the first conductive layer has a function of a second gate electrode of the second transistor,
- wherein the second conductive layer has a function of one of a source electrode and a drain electrode of the first transistor,
- wherein the second conductive layer has a function of one of a source electrode and a drain electrode of the second transistor,
- wherein the third conductive layer has a function of the other of the source electrode and the drain electrode of the first transistor,
- wherein the third conductive layer has a function of the other of the source electrode and the drain electrode of the second transistor,
- wherein the fourth conductive layer has a function of a third gate electrode of the first transistor,
- wherein the fourth conductive layer has a function of a fourth gate electrode of the second transistor,
- wherein the second conductive layer has a first opening,
- wherein the fourth conductive layer has a second opening,
- wherein the third conductive layer has a region overlapping with the first opening and a region overlapping with the second opening,
- wherein the sixth conductive layer is electrically connected to the third conductive layer with the fifth conductive layer, and
- wherein the fifth conductive layer has a region overlapping with the first opening and a region overlapping with the second opening.
Dependencies are inferred from the claim text.