Thin film transistor and method of manufacturing the same

A method of manufacturing a thin film transistor, the method comprising:

• forming a gate electrode on a substrate;
• forming a buffer layer on side portions of the gate electrode;
• forming a gate insulating layer on the gate electrode and the buffer layer;
• forming an active layer on the gate insulating layer;
• forming an etching stop layer on the active layer, the etching stop layer comprising a first opening and a second opening;
• and
• forming a source electrode and a drain electrode, the source electrode and the drain electrode contacting with the active layer through the first opening and the second opening, respectively.

A storage capacitor comprising:

• a substrate;
• a first electrode disposed on the substrate;
• a buffer layer on side portions of the first electrode;
• an insulating layer on the first electrode and the buffer layer;
• an insulating interlayer disposed on the insulating layer;
• and
• a second electrode formed on the insulating interlayer, the second electrode opposing the first electrode.

A semiconductor element, comprising:

• a substrate;
• a first electrode disposed on the substrate;
• a first insulating layer disposed on the first electrode and comprising an opening exposing a first portion of the upper surface of the first electrode, the first portion of the upper surface being less than the entire upper surface of the first electrode;
• a second insulating layer disposed on the first insulating layer and in the opening of the first insulating layer;
• an active layer disposed on the second insulating layer;
• a third insulating layer disposed on the active layer, the third insulating layer comprising a first opening and a second opening;
• a second electrode disposed on the third insulating layer, the second electrode contacting the active layer through the first opening;
• and
• a third electrode disposed on the third insulating layer, the third electrode contacting the active layer through the second opening.