Synthesis of CdSe/ZnS Core/Shell Semiconductor Nanowires

A continuous flow method of manufacturing coated nanowires, wherein the method comprises:

• providing a nanowire solution including a plurality of nanowires;
• combining the nanowire solution and a shell precursor solution in a second continuous flow reactor to form a combined solution;
• wherein the second continuous flow reactor is maintained at a temperature between, and including, 90° C. to 250° C.;
• and
• annealing the shell precursor solution to an outer surface of the nanowires to form coated nanowires.

A method of producing nanowires, the method comprising:

• combining a cadmium precursor solution, a selenium precursor solution, and a catalyst solution at a temperature between, and including 200° C. to 300° C., to create a solution including a plurality of CdSe nanowires,
• wherein the cadmium precursor solution includes cadmium oxide, trioctylphosphine oxide, octadecene, and diphenyl ether,
• wherein the selenium precursor solution includes selenium-octadecene,
• wherein the catalyst solution includes a bismuth compound,
• combining the plurality of nanowires and a shell precursor solution at a temperature between, and including, 90° C. to 250° C. to form a combined solution;
• and
• annealing the shell precursor solution to the nanowires to form a plurality of coated CdSe nanowires.