Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

A memory cell, comprising:

• a select device comprising a select device material located between a first electrode and a second electrode;
• a memory element located between the second electrode and a third electrode;
• and
• a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device.

A method of forming a memory cell, the method comprising:

• providing a select device material between a first electrode material and a second electrode material;
• interleaving a number of conductive diffusion barrier materials with a memory element material to form a memory element on the second electrode;
• and
• forming a third electrode material on the memory element.

A method of forming a memory cell, the method comprising:

• forming a first electrode material;
• forming a first portion select device material on a portion of the first electrode material;
• forming a number of conductive diffusion barrier materials between the first portion of the select device and a second portion of the select device.
• forming a second electrode material on the second portion of the select device material;
• forming a memory element on a portion of the second electrode;
• forming a third electrode material on a portion of the memory element.