Methods of Forming Memory Cells and Arrays

A method of forming memory cells, comprising:

• forming lines of heater material over an array of electrical nodes;
• the array having rows extending along a first direction and having columns extending along a second direction substantially orthogonal to the first direction;
• wordlines being under the nodes and extending along the first direction;
• the lines of heater material extending along the first direction and being along rows of the array;
• forming chalcogenide over the lines of heater material and across the array;
• forming first trenches through the chalcogenide, with the first trenches extending along the first direction;
• lining the first trenches with first insulative material;
• after forming and lining the first trenches, forming patterned bitline material over the chalcogenide;
• the patterned bitline material forming bitline material lines extending along the second direction;
• using the patterned bitline material as a mask during formation of second trenches through the phase change material and the lines of heater material, with the second trenches extending along the second direction and patterning the heater material into heater structures while patterning the chalcogenide into confined structures;
• and
• lining the second trenches with second insulative material.