Resistance switching device and process for producing thereof

A resistance switching device comprising:

• an n-type oxide semiconductor;
• a first electrode disposed on a surface of the n-type oxide semiconductor;
• a second electrode disposed on the surface of the n-type oxide semiconductor with a portion of the n-type oxide semiconductor interposed between the first and second electrodes;
• and
• a Schottky junction formed at an interface between the n-type oxide semiconductor and the first electrode, the Schottky junction having resistance variation memory characteristics when a voltage with different polarities is applied between the first and second electrodes,
• wherein the first electrode includes an oxygen-containing layer comprising at least one of a gold (Au) oxide, a platinum (Pt) oxide, gold containing oxygen and platinum containing oxygen.

A method for fabricating a resistance switching device having a Schottky junction with resistance variation memory characteristics when a voltage having different polarities is applied to the device, the method comprising:

• providing an n-type oxide semiconductor;
• and
• forming a first electrode on the n-type oxide semiconductor including forming a layer of platinum or gold under an atmosphere in which an oxygen partial pressure is 0.01-0.22 Pa;
• and
• forming a second electrode on the n-type oxide semiconductor such that a portion of the n-type oxide semiconductor interposed between the first and second electrodes.