Back to results
US 2015/0028280 A1Published application
Memory cell with independently-sized elements
AssigneeMicron Technology, Inc.
InventorsSamuele Sciarrillo, Marcello Ravasio
Life of this patent
Estimating the term…
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
Claims35
A memory cell, comprising:
- a switch element;
- and
- a memory element formed in series with the switch element,
- wherein a smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
1 more element
A memory cell, comprising:
- a switch element;
- and
- a memory element corresponding to the switch element,
- wherein a modified lateral dimension of a first one of the switch element or memory element is different than a smallest lateral dimension of a second one of the switch element or memory element.
1 more element
A method for forming a memory cell, comprising:
- forming a switch element;
- forming a memory element in series with the switch element;
- and
- changing at least one of a smallest lateral dimension of the switch element and a smallest lateral dimension of the memory element such that the smallest lateral dimension of the switch element is different than the smallest lateral dimension of the memory element.
1 more element
A method for forming a memory cell, comprising:
- forming a stack of materials, the stack of materials including an electrode located between a memory element and a switch element;
- etching, via a directional process, a first one of the switch element or the memory element before etching the electrode;
- etching, via a selective/isotropic process before etching the electrode, the first one of the switch element or the memory element;
- etching the electrode;
- and
- etching a second one of the switch element or the memory element.
3 more elements
A method for forming a memory cell, comprising:
- forming a stack of materials, the stack of materials including a first electrode, a switch element, a second electrode, a memory element, and a third electrode;
- etching the third electrode;
- etching, via a first directional process, the memory element after etching the third electrode;
- etching, via a first selective/isotropic process, the memory element;
- etching the second electrode after etching the memory element via the first directional etch;
- etching, via a second directional process, the switch element;
- and
- etching the first electrode,
- wherein the memory element is etched to a different smallest lateral dimension than a smallest lateral dimension to which the switch element is etched.
6 more elements
Dependencies are inferred from the claim text.