Resistive random access memory devices with extremely reactive contacts
AssigneeInternational Business Machines Corporation
InventorsMarinus J. Hopstaken, Jeehwan Kim, Seyoung Kim, Mark B. Ritter
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Abstract
A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.
Claims20
A resistive switching device, comprising:
- a first electrode;
- a transition metal oxide layer formed on the first electrode;
- and
- an oxygen scavenging electrode formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.
A resistive random access memory cell, comprising:
- a first electrode formed on a substrate;
- a transition metal oxide layer formed on the first electrode;
- an oxygen scavenging electrode formed on the transition metal oxide;
- and
- a biasing circuit integrated on the substrate and coupled to the first electrode and the oxygen scavenging electrode and configured to apply a bias voltage between the first electrode and the oxygen scavenging electrode wherein, when the device is biased, the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode in accordance with the bias voltage.
A method for forming a resistive switching device, comprising:
- forming a first electrode;
- forming a transition metal oxide layer on the first electrode;
- forming an oxygen scavenging electrode on the transition metal oxide;
- and
- controlling oxygen scavenging by the oxygen scavenging electrode by adjusting formation properties of the oxygen scavenging electrode such that when the device is biased, the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode.
Dependencies are inferred from the claim text.