Nonvolatile memory transistor and device including the same

A nonvolatile memory transistor comprising:

• a channel element;
• a gate electrode that corresponds to the channel element;
• a gate insulation layer between the channel element and the gate electrode;
• a bipolar memory layer between the gate insulation layer and the gate electrode;
• and
• a source and a drain separated from each other with respect to the channel element.

A synapse device comprising a nonvolatile memory transistor, the nonvolatile memory transistor comprising:

• a channel element;
• a gate electrode corresponding to the channel element;
• a gate insulation layer between the channel element and the gate electrode;
• an ionic species moving layer between the gate insulation layer and the gate electrode;
• and
• a source and a drain separated from each other with respect to the channel element, wherein a motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode, wherein a threshold voltage changes according to the motion of the ionic species, and wherein the nonvolatile memory transistor has a multi-level characteristic.