Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorToshio HAGA
Life of this patent
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Abstract
Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance.
Claims11
A plasma processing apparatus, comprising:
- a processing container configured to be evacuated;
- an outer upper electrode installed annularly to face a lower electrode where an object to be processed is placed in the processing container;
- an inner upper electrode disposed to be insulated inside a radial direction of the outer upper electrode;
- a processing gas supply unit configured to supply a processing gas to a processing space between the outer upper electrode and the inner upper electrode, and the lower electrode;
- a first high-frequency power supply configured to output a first high-frequency wave having a frequency suitable for generating plasma of the processing gas;
- a first power feeding unit provided with a cylindrical conductive member consecutively connected to the outer upper electrode in a circumferential direction and configured to apply the first high-frequency wave from the first high-frequency power supply to the outer upper electrode through the cylindrical conductive member;
- a second power feeding unit provided with a rod-shaped central conductive member connected to the center of the inner upper electrode, and configured to branch the first high-frequency wave from the first high-frequency power supply from the first power feeding unit to supply the branched-off first high-frequency wave to the inner upper electrode through the central conductive member;
- and
- a variable condenser and a variable inductor installed in series to the central conductive member in the second power feeding unit.
A plasma processing apparatus, comprising:
- a processing container configured to be evacuated;
- an outer upper electrode installed annularly to face a lower electrode where an object to be processed is placed in the processing container;
- an inner upper electrode disposed to be insulated inside a radial direction of the outer upper electrode;
- a processing gas supply unit configured to supply a processing gas to a processing space between the outer upper electrode and the inner upper electrode, and the lower electrode;
- a first high-frequency power supply configured to output a first high-frequency wave having a frequency suitable for generating plasma of the processing gas;
- a first power feeding unit provided with a cylindrical conductive member consecutively connected to the outer upper electrode in a circumferential direction and configured to apply the first high-frequency wave from the first high-frequency power supply to the outer upper electrode through the cylindrical conductive member;
- a second power feeding unit provided with a rod-shaped central conductive member connected to the center of the inner upper electrode, and configured to branch the first high-frequency wave from the first high-frequency power supply from the first power feeding unit to supply the branched-off first high-frequency wave to the inner upper electrode through the central conductive member;
- a variable condenser installed in series to the central conductive member within the second power feeding unit;
- and
- a connector forming a branch point of the first power feeding unit and the second power feeding unit on the central conductive member and attached to the central conductive member to be displaced in an axial direction.
A plasma processing apparatus, comprising:
- a processing container configured to be evacuated;
- an outer upper electrode installed annularly to face a lower electrode where an object to be processed is placed in the processing container;
- an inner upper electrode disposed to be insulated inside a radial direction of the outer upper electrode;
- a processing gas supply unit configured to supply a processing gas to a processing space between the outer upper electrode and the inner upper electrode, and the lower electrode;
- a first high-frequency power supply configured to output a first high-frequency wave having a frequency suitable for generating plasma of the processing gas;
- a first power feeding unit provided with a cylindrical conductive member consecutively connected to the outer upper electrode in a circumferential direction and configured to apply the first high-frequency wave from the first high-frequency power supply to the outer upper electrode through the cylindrical conductive member;
- a second power feeding unit provided with a rod-shaped central conductive member connected to the center of the inner upper electrode, and configured to branch the first high-frequency wave from the first high-frequency power supply from the first power feeding unit to supply the branched-off first high-frequency wave to the inner upper electrode through the central conductive member;
- and
- a variable condenser installed in series to the central conductive member in the second power feeding unit,
- wherein the variable condenser includes a fixed electrode electrically connected to the first high-frequency power supply and a movable electrode which is electrically connected to the inner upper electrode and is rectilinearly movable in the axial direction of the central conductive member while facing the fixed electrode, and
- the central conductive member is constituted by a hollow cylinder which is shorter than the variable condenser in the axial direction.
Dependencies are inferred from the claim text.