Silicon-containing film and method for forming silicon-containing film

Abstract

A silicon-containing film includes a first chemical vapor deposition layer and a second chemical vapor deposition layer. The first chemical vapor deposition layer includes elemental silicon. The first chemical vapor deposition layer is formed by a plasma CVD method such that oxygen concentration is greater than or equal to 0% by element and less than 10% by element. The second chemical vapor deposition layer includes elemental silicon. The second chemical vapor deposition layer is formed by the plasma CVD method such that oxygen concentration is greater than 35% by element and less than or equal to 70% by element. A ratio of the thickness of the second chemical vapor deposition layer relative to the thickness of the first chemical vapor deposition layer is 1.5-9.

Dependencies are inferred from the claim text.