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US 2015/0027290 A1Published application
Semiconductor die singulation methods
AssigneeSemiconductor Components Industries, LLC
InventorsGordon M. GRIVNA, James M. PARSEY, JR.
Life of this patent
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Abstract
In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.
Claims25
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A cutting tool comprising:
- a central support section having a major axis;
- a cutting tip;
- a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;
- a depth stop spaced a first distance from the cutting tip toward the central support section wherein, a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop;
- and
- an accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.
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A method of forming a tool for a semiconductor wafer comprising:
- forming the tool to reduce a thickness of a material formed on a semiconductor wafer;
- forming the tool with a cutting tip and cutting surfaces that are configured to penetrate into the material to form reduced thickness regions in the material;
- and
- forming an accumulation region of the tool with a recess having a first volume for accepting portions of the material displaced from within the material by the penetration.
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Dependencies are inferred from the claim text.