Baffle and apparatus for treating surface of baffle, and substrate treating apparatus
AssigneePsk Inc.
InventorYoungYeon JI
Life of this patent
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Abstract
The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound.
Claims21
A baffle which is formed with holes designed for distributing a process gas excited to a plasma state, the baffle having a surface which is treated with a surface treating material comprising a silicon compound.
A substrate treating apparatus comprising:
- a process chamber having a space formed therein;
- a susceptor positioned inside the process chamber to support a substrate;
- and
- a process gas supply part supplying a process gas in a plasma state to the inside of the process chamber,
- wherein an inner side surface of the process chamber is treated with a surface treating material comprising a silicon compound.
A baffle surface treating apparatus comprising:
- a surface treating chamber having a space formed therein;
- a support plate which is positioned inside the surface treating chamber and provided as a lower electrode, and on which a baffle is placed;
- an upper electrode which is disposed above the support plate to face the support plate and forms an electric field in a space between the support plate and the upper electrode;
- and
- a surface treating gas supply unit supplying a surface treating gas including a silicon compound to a space between the support plate and the upper electrode,
- wherein the surface treating gas is excited to a plasma state by the electric field and treats a surface of the baffle
Dependencies are inferred from the claim text.