Process condition sensing device and method for plasma chamber
AssigneeKLA-Tencor Corporation
InventorsEarl Jensen, Mei Sun
Life of this patent
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Abstract
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).
Claims23
A sensing device for measuring plasma process parameters in a plasma chamber for processing workpieces, the sensing device comprising:
- a substrate made of a material that is substantially the same material as workpieces that are processed by a plasma in the plasma chamber;
- one or more sensors embedded in the substrate, wherein each sensor comprises a collector portion made of substantially the same material as the substrate, wherein the collector portion includes a surface that is coplanar with a top surface of the substrate;
- and
- sensor electronics embedded into the substrate and coupled to the collector portion.
Dependencies are inferred from the claim text.