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US 2015/0020875 A1Published application
High Performance, High Bandgap, Lattice-Mismatched, GaInP Solar Cells
AssigneeAlliance for Sustainable Energy, LLC
InventorsMark A. WANLASS, Jeffrey J. CARAPELLA, Myles A. STEINER
Life of this patent
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Abstract
High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
Claims22
A photovoltaic converter, comprising:
- a photovoltaic cell comprising GaInP with a bandgap greater than about 1.9 eV and doped to have a homojunction grown lattice-mismatched on a GaAs parent substrate;
- and
- means positioned between the parent substrate and the photovoltaic cell for providing a crystalline epitaxial growth plane on the parent substrate with a lattice constant that matches a relaxed lattice constant of the GaInP photovoltaic cell.
A photovoltaic converter, comprising:
- a photovoltaic cell comprising GaInP with a bandgap greater than about 1.9 e V and doped to have a homojunction grown lattice-mismatched on a GaAs parent substrate;
- and
- a graded layer comprising GaAs1-xPx, wherein “x” increases until the proportions of As and P in the GaAsP are such that the GaAsP has a lattice constant in the growth plane that matches the relaxed lattice constant of the GaInP photovoltaic cell.
22-39. (canceled)
Dependencies are inferred from the claim text.