Atomic Layer Deposition Using Radicals Of Gas Mixture
AssigneeVeeco ALD Inc.
InventorSang In Lee
Life of this patent
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Abstract
Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
Claims12
A radical reactor for generating radicals of gas, comprising:
- a first body formed with:
- a first channel for supplying a gas mixture of a nitrogen compound gas and another gas;
- a plasma chamber connected to the first channel to receive the supplied gas mixture and generate radicals of the supplied gas mixture;
- a reaction chamber connected to the plasma chamber to receive the generated radicals, the reaction chamber located above a substrate to expose the substrate to the radicals;
- one or more exhaust portions to discharge excess gas mixture or radicals;
- and
- an electrode extending in the first body, voltage applied across the electrode and the first body to generate plasma in the plasma chamber.
Dependencies are inferred from the claim text.