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US 2015/0020731 A1Published application
Defect reduction in seeded aluminum nitride crystal growth
AssigneeCrystal IS, Inc.
InventorsRobert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
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Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Claims36
-17. (canceled)
A method for growing single-crystal aluminum nitride (AlN), the method comprising:
- disposing an AlN seed on a seed holder sized and shaped to receive an AlN seed, thereby forming a seed-seed holder stack;
- minimizing or substantially eliminating any gap between the AlN seed and the seed holder by positioning a weight on the seed-seed holder stack;
- and
- depositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.
1 more element
Dependencies are inferred from the claim text.