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US 2015/0001469 A1Published application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiyuan Cheng, Calvin Sheen
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Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Claims20
A structure comprising:
- a first device on a substrate, the substrate comprising a first crystalline semiconductor material;
- and
- a second device on the substrate and disposed on a second crystalline semiconductor material, the second device comprising a tunneling diode, the first device being electrically coupled to the second device, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, defects in the second crystalline semiconductor material arising from the lattice mismatch terminating at a lateral surface of the second crystalline semiconductor material.
A device comprising:
- logic circuitry comprising:
- a tunneling device disposed on first crystalline material, the first crystalline material being disposed on a substrate, the substrate comprising a second crystalline material, the first crystalline material being lattice mismatched to the second crystalline material, defects in the first crystalline material arising from the lattice mismatch with the second crystalline material terminating at a dielectric sidewall adjoining the second crystalline material;
- and
- a transistor disposed on the substrate and electrically coupled to the tunneling device.
1 more element
A structure comprising:
- a first crystalline material on a substrate, the first crystalline material having a surface defined by a non-crystalline sidewall, the substrate comprising a second crystalline material, the first crystalline material being lattice mismatched to the second crystalline material, defects in the first crystalline material arising from the lattice mismatch with the second crystalline material terminating at the surface defined by the non-crystalline sidewall, the first crystalline material having a width in a plane parallel to and proximate to a top surface of the substrate and a height in a direction perpendicular to the top surface of the substrate, the height being equal to or greater than half the width;
- and
- a tunneling device disposed over at least a portion of the first crystalline material.
Dependencies are inferred from the claim text.