Data protecting method, memory controller and memory storage device

A memory storage device, comprising:

• a connector, configured to couple to a host system;
• a rewritable non-volatile memory module, comprising a plurality of physical erasing units;
• and
• a memory controller, coupled to the connector and the rewritable non-volatile memory module, and configured to receive a first flush command from the host system, and to receive a first write command from the host system after receiving the first flush command, wherein the first write command instructs to write a first data,
• wherein the memory controller is configured to generate a first error correcting code and a second error correcting code corresponding to the first data according to the first data, wherein a protection capability of the second error correcting code is different from a protection capability of the first error correcting code,
• wherein the memory controller is configured to receive a second write command, wherein the second write command instructs to write a second data,
• wherein the memory controller is configured to receive a second flush command from the host system after receiving the first write command and the second write command, wherein the second flush command instructs to write the first data and the second data in a buffer memory into the rewritable non-volatile memory module,
• wherein the memory controller is configured to write the first data, the first error correcting code, and the second data into the rewritable non-volatile memory module,
• wherein, the memory controller is configured to write the second error correcting code corresponding to the first data into the rewritable non-volatile memory module after receiving the second flush command,
• wherein the memory controller is configured not to generate a second error correcting code corresponding to the second data, or to generate the second error correcting code corresponding to the second data but not to write the second error correcting code corresponding to the second data into the rewritable non-volatile memory module.

A memory controller for a rewritable non-volatile memory module, the memory controller comprising:

• a host interface, configured to couple to a host system;
• a memory interface, configured to couple to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units;
• and
• a memory management circuit, coupled to the host interface and the memory interface, and configured to receive a first flush command from the host system, and receive a first write command from the host system after receiving the first flush command, wherein the first write command instructs to write a first data,
• wherein the memory management circuit is configured to generate a first error correcting code and a second error correcting code corresponding to the first data according to the first data, wherein a protection capability of the second error correcting code is different from a protection capability of the first error correcting code,
• wherein the memory management circuit is configured to receive a second write command, wherein the second write command instructs to write a second data,
• wherein the memory management circuit is configured to receive a second flush command from the host system after receiving the first write command and the second write command, wherein the second flush command instructs to write the first data and the second data in a buffer memory into the rewritable non-volatile memory module,
• wherein the memory management circuit is configured to write the first data, the first error correcting code, and the second data into the rewritable non-volatile memory module,
• wherein the memory management circuit is configured to write the second error correcting code corresponding to the first data into the rewritable non-volatile memory module after receiving the second flush command,
• wherein the memory management circuit is configured not to generate a second error correcting code corresponding to the second data, or to generate the second error correcting code corresponding to the second data but does not to write the second error correcting code corresponding to the second data into the rewritable non-volatile memory module.