Data writing method, memory controller and memory storage apparatus
AssigneePhison Electronics Corp.
InventorChih-Kang Yeh
Life of this patent
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AssigneePhison Electronics Corp.
InventorChih-Kang Yeh
Estimating the term…
A data writing method for a rewritable non-volatile memory module is provided. The method includes selecting at least one physical erasing unit as a global random area and building a global random area searching table for recording update information corresponding to updated logical pages that data stored in the global random area belongs to. The method also includes receiving updated data belonging to a logical page; and determining whether a data dispersedness degree corresponding to the global random area is smaller than a data dispersedness degree threshold. The method further includes, if the data dispersedness degree corresponding to the global random area is smaller than the data dispersedness degree threshold, writing the update data into the global random area and recording update information corresponding to the logical page in the global random area searching table.
A data writing method for writing data into a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module includes a plurality of physical erasing units, each of the physical erasing units includes a plurality of physical programming units, the physical erasing units are grouped into at least a data area and a spare area, the physical erasing units of the spare area are used for substituting the physical erasing units of the data area to write data, a plurality of logical units are configured for mapping to the physical erasing units of the data area, and each of the logical units includes a plurality of logical pages, the data writing method comprising:
A memory controller for controlling a rewritable non-volatile memory module, the memory controller comprising:
A memory storage apparatus, comprising:
Dependencies are inferred from the claim text.