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AssigneeMitsubishi Chemical Corporation
InventorsKen HARADA, Atsushi ITO, Toshiyuki SUZUKI
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An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)′ to (4)′: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)′ an inorganic alkali; (2)′ a carboxyl group-containing chelating agent; (3)′ an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)′ water.
A cleaning liquid for semiconductor device, comprising the following components (1) to (5):
A cleaning liquid for semiconductor device, which is a cleaning liquid of a substrate for semiconductor device having a Cu wiring and a low-dielectric constant insulating film on a surface thereof, the substrate being one after conducting chemical mechanical polishing, the cleaning liquid comprising the following components (1)′ to (4)′:
Dependencies are inferred from the claim text.