US 2014/0370719 A1Published application

Method of focus measurement, exposure apparatus, and method of manufacturing semiconductor device

AssigneeKabushiki Kaisha Toshiba

InventorNobuhiro KOMINE

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Abstract

A method of focus measurement of the embodiment irradiates exposure light from a first direction and projects first and second line-and-space patterns on a substrate. Further, exposure light is irradiated from a second direction and third and fourth line-and-space patterns are projected on the substrate. By measuring a distance between the first and third line-and-space patterns on the substrate, a sum of a dislocated amount caused by dislocation of focus and an overlap dislocation amount between the first and third line-and-space patterns is calculated as a first dislocated amount. Further, by measuring a distance between the second and fourth line-and-space patterns on the substrate, an overlap dislocation amount between the second and fourth line-and-space patterns is calculated as a second dislocation amount. Further, based on the first and second dislocation amounts, the focus dislocation amount is calculated.

Claims20

Dependent claims

A method of focus measurement comprising:

projecting first and second line-and-space patterns on a substrate on which a photosensitive material is applied by irradiating first exposure light from a first direction that is displaced from an optical axis of an optical system on the first line-and-space pattern having a first pattern pitch and the second line-and-space pattern having a second pattern pitch;
projecting third and fourth line-and-space patterns on the substrate by irradiating second exposure light from a second direction that is displaced from the optical axis of the optical system on the third line-and-space pattern having the first pattern pitch and the fourth line-and-space pattern having the second pattern pitch;
calculating a sum of a dislocated amount on the substrate caused by a dislocation of focus and an overlap dislocation amount on the substrate between the first and third line-and-space patterns as a first dislocation amount by measuring a distance between the first line-and-space pattern and the third line-and-space pattern on the substrate;
calculating an overlap dislocation amount on the substrate between the second and fourth line-and-space patterns as a second dislocation amount by measuring a distance between the second line-and-space pattern and the fourth line-and-space pattern on the substrate;
and
calculating the focus dislocation amount based on the first and second dislocation amounts.

3 more elements

A method of manufacturing a semiconductor device, the method comprising:

projecting first and second line-and-space patterns on a first substrate on which a photosensitive material is applied by irradiating first exposure light from a first direction that is displaced from an optical axis of an optical system on the first line-and-space pattern having a first pattern pitch and the second line-and-space pattern having a second pattern pitch;
projecting third and fourth line-and-space patterns on the first substrate by irradiating second exposure light from a second direction that is displaced from the optical axis of the optical system on the third line-and-space pattern having the first pattern pitch and the fourth line-and-space pattern having the second pattern pitch;
calculating a sum of a dislocated amount on the substrate caused by a dislocation of focus and an overlap dislocation amount on the substrate between the first and third line-and-space patterns as a first dislocation amount by measuring a distance between the first line-and-space pattern and the third line-and-space pattern on the first substrate;
calculating an overlap dislocation amount on the substrate between the second and fourth line-and-space patterns as a second dislocation amount by measuring a distance between the second line-and-space pattern and the fourth line-and-space pattern on the first substrate;
calculating the focus dislocation amount based on the first and second dislocation amounts;
modifying the focus dislocation amount;
projecting a circuit pattern on a second substrate on which a photosensitive material is applied by irradiating third exposure light on the circuit pattern formed on a reticle;
and
forming a resist pattern corresponding to the circuit pattern on the second substrate by developing the second substrate.

6 more elements

Dependencies are inferred from the claim text.