Thermal surface treatment for reuse of wafers after epitaxial lift off
AssigneeThe Regents of the University of Michigan
InventorsKyusang Lee, Jeramy Zimmerman, Stephen R. Forrest
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Abstract
There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.
Claims20
A method of preserving the integrity of a growth substrate, comprising:
- providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer;
- releasing the at least one epilayer by etching the sacrificial layer with an etchant;
- and
- heat treating the growth substrate and/or at least one of the protective layers.
A method of preserving the integrity of a growth substrate, comprising:
- providing a structure comprising a growth substrate, a first protective layer, a second protective layer, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the first and second protective layers are positioned between the growth substrate and the at least one epilayer;
- releasing the at least one epilayer by etching the sacrificial layer with an etchant;
- and
- heat treating the growth substrate and/or at least one of the first and second protective layers.
Dependencies are inferred from the claim text.