Plasma processing method and substrate processing apparatus
AssigneeWintel Co., Ltd
InventorsSeng-Hyun CHUNG, Hyang-Joo LEE
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Abstract
Provided are a plasma processing method and a substrate processing apparatus. The plasma processing method includes mounting at least one first plasma source and at least one second plasma source on a chamber, supplying a first gas to the first plasma source, supplying a second gas different from the first gas to the second plasma source, applying power to the first plasma source to generate first plasma, applying power to the second plasma source to generate second plasma, and processing a substrate disposed inside the chamber using the first and second plasma.
Claims20
A plasma processing method comprising:
- mounting one or more first plasma sources and one or more second plasma sources on a chamber;
- supplying a first gas to the first plasma sources;
- supplying a second gas different from the first gas to the second plasma sources;
- applying power to the first plasma sources to generate first plasma;
- applying power to the second plasma sources to generate second plasma;
- and
- processing a substrate disposed inside the chamber using the first plasma and the second plasma.
A substrate processing apparatus comprising:
- one or more first plasma sources mounted on a chamber to receive a first gas;
- one or more second plasma sources mounted on the chamber to receive a second gas;
- a first RF power source supplying power to the first plasma sources;
- a second RF power source supplying power to the second plasma sources;
- a first power distribution unit distributing the power received from the first RF power source to the first plasma sources;
- a second power distribution unit distributing the power received from the second RF power source to the second plasma sources;
- and
- an RF bias power source applying RF power to a substrate disposed inside the chamber.
Dependencies are inferred from the claim text.