Methods of forming a pattern and devices formed by the same
AssigneeSamsung Electronics Co., Ltd.
InventorsEunsung KIM, Jaewoo NAM, Chulho SHIN
Life of this patent
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Abstract
The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.
Claims29
A method of forming a pattern, the method comprising:
- forming a neutral layer having an uneven structure over a substrate;
- coating a block copolymer layer on the neutral layer;
- phase-separating the block copolymer layer to form a plurality of first patterns spaced apart from each other and a second pattern filling a space between the first patterns;
- removing the first patterns or the second pattern;
- and
- performing an etching process using a not-removed pattern of the first patterns or the second pattern as an etch mask.
A method of forming a pattern, the method comprising:
- forming a lower structure having an uneven structure on a substrate;
- conformally forming a neutral layer covering a surface of the lower structure;
- coating a block copolymer layer on the neutral layer;
- phase-separating the block copolymer layer to form first patterns spaced apart from each other and a second pattern filling a space between the first patterns;
- removing the first patterns or the second pattern;
- and
- performing an etching process with respect to the lower structure using a not-removed pattern of the first patterns or the second pattern as an etch mask.
-20. (canceled)
A method of forming a pattern, comprising:
- coating a neutral layer with a block copolymer layer, the neutral layer having an uneven profile;
- phase-separating the block copolymer layer to form a plurality of first patterns within a second pattern;
- removing the plurality of first patterns or the second pattern to obtain a remaining pattern;
- and
- performing an etching process using the remaining pattern as an etch mask.
Dependencies are inferred from the claim text.