US 2014/0370711 A1 · NITROGEN DOPED AMORPHOUS CARBON HARDMASK

Abstract

Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.

Claims20

Dependent claims

A method of forming a nitrogen doped amorphous carbon layer on a substrate, comprising:

positioning a substrate in a substrate processing chamber;
introducing a nitrogen containing hydrocarbon source into the processing chamber;
introducing a hydrocarbon source into the processing chamber;
introducing a plasma-initiating gas into the processing chamber;
heating the substrate to a temperature of between about 200° C. and about 650° C. during the process of forming a nitrogen doped amorphous carbon layer on the substrate;
generating a plasma in the processing chamber;
and
forming a nitrogen doped amorphous carbon layer on the substrate.

5 more elements

Dependencies are inferred from the claim text.

Nitrogen doped amorphous carbon hardmask

Life of this patent

Nitrogen doped amorphous carbon hardmask

Life of this patent

Abstract

Claims20