Methods of forming semiconductor devices including low-k dielectric layer
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Hoon AHN, Seung-Hyuk CHOI, Kyu-Hee HAN
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Abstract
Methods of forming a dielectric layer are provided. The methods may include introducing oxygen radicals and organic silicon precursors into a chamber to form a preliminary dielectric layer on a substrate. Each of the organic silicon precursors may include a carbon bridge and a porogen such that the preliminary dielectric layer may include carbon bridges and porogens. The methods may also include removing at least some of the porogens from the preliminary dielectric layer to form a porous dielectric layer including the carbon bridges.
Claims20
A method of forming a semiconductor device, comprising:
- introducing a plasma and organic silicon precursors into a chamber to form a preliminary dielectric layer on a wafer, wherein the plasma comprises oxygen radicals generated from an external plasma generator that is outside the chamber, the organic silicon precursors comprise carbon bridges and porogens, and the preliminary dielectric layer comprises the porogens;
- and
- forming a porous dielectric layer by removing at least some of the porogens from the preliminary dielectric layer.
A method of forming a semiconductor device, comprising:
- forming a via hole in a lower layer formed on a substrate;
- forming a preliminary via dielectric layer comprising porogens on an upper surface of the lower layer and an inner wall of the via hole;
- converting the preliminary via dielectric layer into a porous via dielectric layer by performing a curing process to remove the porogens;
- and
- forming a via plug filling the via hole on the porous via dielectric layer,
- wherein forming the preliminary via dielectric layer comprises introducing oxygen plasma generated outside a chamber and organic silicon precursors comprising carbon bridges and the porogens into the chamber.
A method of forming a dielectric layer, comprising:
- introducing oxygen radicals and organic silicon precursors into a chamber to form a preliminary dielectric layer on a substrate, wherein each of the organic silicon precursors comprises a carbon bridge and a porogen such that the preliminary dielectric layer comprises carbon bridges and porogens;
- removing at least some of the porogens from the preliminary dielectric layer to form a porous dielectric layer comprising the carbon bridges.
Dependencies are inferred from the claim text.