Method of fabricating semiconductor patterns

Abstract

A method of fabricating semiconductor patterns includes steps as follows: Firstly, a substrate is provided and has at least a first semiconductor pattern and at least a second semiconductor pattern, wherein a line width of the first semiconductor pattern is identical to a line width of the second semiconductor pattern. Then, a barrier pattern is formed over a surface of the first semiconductor pattern, and the second semiconductor pattern is exposed. Then, a surface portion of the second semiconductor pattern is reacted to form a sacrificial structure layer. Then, the barrier pattern and the sacrificial structure layer are removed, and the line width of the second semiconductor pattern is shrunken to be less than the line width of the first semiconductor pattern. A third semiconductor pattern having a line width can be further provided.

Dependencies are inferred from the claim text.