Method for fabricating semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench;
• forming a first conductive layer along sidewall surfaces and a bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench;
• forming a mask layer on the first conductive layer and the second conductive layer, the mask layer filling the first trench and the second trench;
• forming a photoresist film pattern on the mask layer, the photoresist film pattern exposing the mask layer formed on the first conductive layer;
• forming a mask pattern exposing the first conductive layer by etching the mask layer filling the first trench using a mixed gas including oxygen;
• selectively removing the first conductive layer using a stack of the photoresist film pattern and the mask pattern as a removal mask;
• forming a first metal gate filling the first trench and a second metal gate filling the second trench after removing the mask pattern and the photoresist film pattern.

A method for fabricating a semiconductor device, the method comprising:

• forming a first fin type active pattern and a second fin type active pattern on a substrate;
• forming a first trench crossing the first fin type active pattern on the first fin type active pattern and a second trench crossing the second fin type active pattern on the second fin type active pattern;
• forming a first TiN layer along sidewall surfaces and bottom surface of the first trench and a second TiN layer along sidewall surfaces and bottom surface of the second trench;
• forming a bottom anti-reflective coating (BARC) layer on the first conductive layer and second conductive layer, the BARC layer filling the first trench and the second trench;
• forming a photoresist film pattern on the BARC layer, the photoresist film pattern exposing the mask layer formed on the first conductive layer;
• forming a BARC pattern by removing the BARC layer filling the first trench using a mixed gas including oxygen, the BARC pattern exposing the first TiN layer;
• selectively removing the first TiN layer using the photoresist film pattern and the BARC pattern as a removal mask;
• and
• forming a first metal gate surrounding the first fin type active pattern by filling the first trench and a second metal gate surrounding the second fin type active pattern by filling the second trench after removing the BARC pattern and the photoresist film pattern.

A method of forming a semiconductor device comprising:

• forming a first trench and a second trench in an interlayer insulating layer on a substrate;
• forming a first conductive layer along sidewall surfaces and a bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and a bottom surface of the second trench;
• forming a mask pattern on the second conductive layer and on the first conductive layer, the mask pattern filling the first trench and the second trench, the mask pattern being in direct contact with the first conductive layer, the mask layer comprising a bottom anti-reflective coating (BARC) layer;
• removing the mask layer filling the first trench by reactive ion etching using a gas including oxygen to form a mask pattern;
• and
• removing the first conductive layer using the mask pattern as a removal mask.