Method for fabricating a semiconductor device
AssigneeSoitec
InventorOleg Kononchuk
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Abstract
The present invention relates to a method for fabricating a semiconductor structure comprising a semiconductor layer and a metallic layer, to improve the breakdown voltage properties of the device and reduce leakage currents, the method comprises the steps of a) providing a semiconductor layer comprising defects and/or dislocations; b) removing material at one or more locations of the defects and/or dislocations thereby forming pits in the semiconductor layer, c) passivating the pits, and c) providing the metallic layer over the semiconductor layer. The invention also relates to a corresponding semiconductor structure.
Claims21
A method for fabricating a semiconductor structure comprising a semiconductor layer and a metallic layer, the method comprising the steps of:
- a) providing a semiconductor layer comprising at least one of defects and dislocations
- b) removing material at one or more locations of the at least one of defects and dislocations thereby forming pits in the semiconductor layer,
- c) passivating the pits, and
- d) providing the metallic layer over the semiconductor layer.
A semiconductor structure, comprising a semiconductor layer and a metallic layer provided over the semiconductor layer, wherein pits at least partially filed with a dielectric material are arranged in the semiconductor layer on top of at least one of dislocations and defects in the semiconductor layer.
(canceled)
Dependencies are inferred from the claim text.